JAN1N5415US/TR

Microchip Technology

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JAN1N5415US/TR

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B, Axial

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Description:

DIODE GEN PURP 50V 3A

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Mfr	Microchip Technology
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Series	Military, MIL-PRF-19500/411
Package	Tape & Reel (TR)
Technology	Standard
Mounting Type	Through Hole
Package / Case	B, Axial
Product Status	Active
Capacitance @ Vr, F	-
Supplier Device Package	B, Axial
Reverse Recovery Time (trr)	150 ns
Current - Reverse Leakage @ Vr	1 µA @ 50 V
Voltage - DC Reverse (Vr) (Max)	50 V
Current - Average Rectified (Io)	3A
Operating Temperature - Junction	-65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If	1.5 V @ 9 A